AN815
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
vishay.com
FIGURE 3.
THERMAL PERFORMANCE
R q JA
P D + 150 C o * 25 C
R q JA
P D + 150 C o * 60 C
Junction-to-Foot Thermal Resistance
(Package Performance)
The junction to foot thermal resistance is a useful method of
comparing different packages thermal performance.
A helpful way of presenting the thermal performance of the
6-Pin SC-70 copper leadframe device is to compare it to the
traditional Alloy 42 version.
COOPER LEADFRAM E
Room Ambient 25 _ C
T J(max) * T A
P D +
o o
124 C W
P D + 1.01 W
Elevated Ambient 60 _ C
T J(max) * T A
P D +
o o
124 C W
P D + 726 mW
R q JA
R q JA
P D + 150 C o * 25 C
P D + 150 C o * 25 C
329.7 _ C/W
208.5 _ C/W
2) Industry standard 1-inch 2 PCB with
211.8 _ C/W 103.5 _ C/W
Thermal performance for the 6-pin SC-70 measured as
junction-to-foot thermal resistance, where the “foot” is the
drain lead of the device at the bottom where it meets the PCB.
The junction-to-foot thermal resistance is typically 40 _ C/W in
the copper leadframe and 163 _ C/W in the Alloy 42 leadframe
— a four-fold improvement. This improved performance is
obtained by the enhanced thermal conductivity of copper over
Alloy 42.
Power Dissipation
The typical R q JA for the single 6-pin SC-70 with copper
leadframe is 103 _ C/W steady-state, compared with 212 _ C/W
for the Alloy 42 version. The figures are based on the 1-inch 2
FR4 test board. The following example shows how the thermal
resistance impacts power dissipation for the two different
leadframes at varying ambient temperatures.
ALLOY 42 LEADFRAME
Room Ambient 25 _ C Elevated Ambient 60 _ C
T J(max) * T A T J(max) * T A
P D + P D +
o o o o
212 C W 212 C W
P D + 590 mW P D + 425 mW
www.vishay.com
2
As can be seen from the calculations above, the compact 6-pin
SC-70 copper leadframe LITTLE FOOT power MOSFET can
handle up to 1 W under the stated conditions.
Testing
To further aid comparison of copper and Alloy 42 leadframes,
Figure 5 illustrates single-channel 6-pin SC-70 thermal
performance on two different board sizes and two different pad
patterns. The measured steady-state values of R q JA for the
two leadframes are as follows:
LITTLE FOOT 6-PIN SC-7 0
Alloy 42 Copper
1) Minimum recommended pad pattern on
the EVB board V (see Figure 3.
maximum copper both sides.
The results indicate that designers can reduce thermal
resistance (R q JA ) by 36% simply by using the copper
leadframe device rather than the Alloy 42 version. In this
example, a 121 _ C/W reduction was achieved without an
increase in board area. If increasing in board size is feasible,
a further 105 _ C/W reduction could be obtained by utilizing a
1-inch 2 square PCB area.
The copper leadframe versions have the following suffix:
Single: Si14xxEDH
Dual: Si19xxEDH
Complementary: Si15xxEDH
Document Number: 71334
12-Dec-03
相关PDF资料
SI1470DH-T1-GE3 MOSFET N-CH 30V SC-70-6
SI1471DH-T1-GE3 MOSFET P-CH 30V SC-70-6
SI1557DH-T1-E3 MOSFET N/P-CH 12V SC70-6
SI1563EDH-T1-GE3 MOSFET N/P-CH 20V SC70-6
SI1900DL-T1-E3 MOSFET N-CH DUAL 30V SC70-6
SI1902DL-T1-GE3 MOSFET N-CH G-S 20V DUAL SC-70-6
SI1926DL-T1-E3 MOSF N CH DUAL D-S 60V SC-70-6
SI1967DH-T1-E3 MOSFET 2P-CH 20V 1.3A SC70-6
相关代理商/技术参数
SI1470DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SI1470DH_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SI1470DH-T1-E3 功能描述:MOSFET 30V 4.0A 2.8W 66mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1470DH-T1-GE3 功能描述:MOSFET 30V 4.0A 2.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1470EDH-T1-E3 制造商:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SI1471DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI1471DH-T1-E3 功能描述:MOSFET 30V 2.7A 2.78W 100 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1471DH-T1-GE3 功能描述:MOSFET P-CH 30V SC-70-6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件